Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 60.0 A
Technical parameters/drain source resistance: 10.2 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125W (Tc)
Technical parameters/input capacitance: 2.90 nF
Technical parameters/gate charge: 3.00 nC
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 67.0 A
Technical parameters/rise time: 169 ns
Technical parameters/Input capacitance (Ciss): 2900pF @25V(Vds)
Technical parameters/rated power (Max): 125 W
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP120NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP120NF10 晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
|
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