Technical parameters/working voltage: 60.0V (max)
Technical parameters/number of output interfaces: 1
Technical parameters/Input voltage (DC): 5.50 V
Technical parameters/output current: 1.4 A
Technical parameters/drain source resistance: 0.13 Ω
Technical parameters/dissipated power: 1 W
Technical parameters/product series: IPS2041RPBF
Technical parameters/threshold voltage: 2 V
Technical parameters/clamp voltage: 68 V
Technical parameters/input voltage (Max): 6 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage: 4V ~ 5.5V
Technical parameters/power supply voltage (Max): 60 V
Technical parameters/power supply voltage (Min): 0.3 V
Technical parameters/input voltage: 4V ~ 5.5V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -40℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VND7NV04-E
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS VND7NV04-E 晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V
|
||
VND7NV04TR-E
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS VND7NV04TR-E 晶体管, MOSFET, N沟道, 6 A, 45 V, 0.06 ohm, 5 V, 500 mV
|
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