Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 200mW (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 0.25A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 15pF @25V(Vds)
Technical parameters/rated power (Max): 200 mW
Technical parameters/descent time: 28 ns
Technical parameters/dissipated power (Max): 200mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RSM002N06T2L
|
ROHM Semiconductor | 功能相似 | SOT-723-3 |
RSM002N06 系列 N沟道 60 V 2.4 Ohm 200 mW 表面贴装 Mosfet - VMT-3
|
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