Technical parameters/drain source resistance: 2.70 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 40.0 W
Technical parameters/leakage source breakdown voltage: 25.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -64.0 A to 64.0 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
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