Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 120 @500mA, 3V
Technical parameters/Maximum current amplification factor (hFE): 390
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 120
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/width: 5.5 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Power Management, Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD1733TLP
|
ROHM Semiconductor | 类似代替 | TO-252-3 |
CPT NPN 80V 1A
|
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