Technical parameters/dissipated power: 115 mW
Technical parameters/breakdown voltage (collector emitter): 3.3 V
Technical parameters/gain: 12.5 dB
Technical parameters/minimum current amplification factor (hFE): 60 @5mA, 2V
Technical parameters/rated power (Max): 115 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 115 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-523
External dimensions/packaging: SOT-523
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review