Technical parameters/frequency: 3500 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.3 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.3A
Technical parameters/minimum current amplification factor (hFE): 90 @50mA, 5V
Technical parameters/rated power (Max): 1.3 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-243
External dimensions/packaging: TO-243
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC5551AE-TD-E
|
ON Semiconductor | 功能相似 | TO-243 |
RF Small Signal Bipolar Transistor
|
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