Technical parameters/frequency: 150 MHz
Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 100 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 7 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 40 @10mA, 10V
Technical parameters/rated power (Max): 7 W
Technical parameters/DC current gain (hFE): 60
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 7 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 8 mm
External dimensions/width: 3.25 mm
External dimensions/height: 11 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC3503CSTU
|
Fairchild | 类似代替 | TO-126-3 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
||
2SC3503CSTU
|
ON Semiconductor | 类似代替 | TO-126-3 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
||
KSC3503DS
|
Fairchild | 类似代替 | TO-126-3 |
FAIRCHILD SEMICONDUCTOR KSC3503DS 单晶体管 双极, NPN, 300 V, 150 MHz, 7 W, 100 mA, 60 hFE
|
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