Technical parameters/rated voltage (DC): -600 V
Technical parameters/rated current: -1.00 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1000 mW
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 82 @100mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 180
Technical parameters/rated power (Max): 1 W
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/width: 5.5 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
A18-6
|
RFMD | 功能相似 |
Small Signal Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon,
|
|||
A18-6
|
ROHM Semiconductor | 功能相似 | SC-63 |
Small Signal Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon,
|
||
A18-6
|
Thomas & Betts | 功能相似 |
Small Signal Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon,
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review