Technical parameters/rated voltage (DC): -32.0 V
Technical parameters/rated current: -2.00 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 180 @500mA, 3V
Technical parameters/Maximum current amplification factor (hFE): 180
Technical parameters/rated power (Max): 10 W
Technical parameters/dissipated power (Max): 10 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2DB1182Q-13
|
Diodes | 功能相似 | TO-252-3 |
三极管(BJT) 2DB1182Q-13 DPAK
|
||
2SB1182TLR
|
ROHM Semiconductor | 类似代替 | TO-252-3 |
中等功率晶体管( 32V , 2A ) Medium power transistor (32V,2A)
|
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