Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 1.4 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 0.25 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 500 mA
Technical parameters/Input capacitance (Ciss): 30pF @25V(Vds)
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-89-6
External dimensions/length: 1.7 mm
External dimensions/width: 1.7 mm
External dimensions/height: 0.6 mm
External dimensions/packaging: SC-89-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: Industrial, power management, portable equipment
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002BKV
|
Nexperia | 功能相似 | SOT-666 |
NXP 2N7002BKV 双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
|
||
2N7002BKV,115
|
Nexperia | 功能相似 | SOT-666 |
2N7002 系列 N 沟道 60 V 3 Ω 0.83 W 340 mA TrenchMOS FET - SOT666
|
||
2N7002BKV,115
|
NXP | 功能相似 | SOT-666-6 |
2N7002 系列 N 沟道 60 V 3 Ω 0.83 W 340 mA TrenchMOS FET - SOT666
|
||
2N7002PV,115
|
Nexperia | 功能相似 | SOT-666-6 |
2N7002 系列 N-沟道 60 V 3.9 Ω 0.83 W 350 mA TrenchMOS FET - SOT-666
|
||
2N7002PV,115
|
NXP | 功能相似 | SOT-666-6 |
2N7002 系列 N-沟道 60 V 3.9 Ω 0.83 W 350 mA TrenchMOS FET - SOT-666
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review