Technical parameters/polarity: NPN
Technical parameters/dissipated power: 500 mW
Technical parameters/gain bandwidth product: 80 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.15A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 25 @150mA, 6V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.8 mm
External dimensions/width: 4.2 mm
External dimensions/height: 5.2 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PC1815GR,126
|
NXP | 完全替代 | TO-226-3 |
SPT NPN 50V 0.15A
|
||
2PC1815GR,412
|
NXP | 完全替代 | TO-226-3 |
SPT NPN 50V 0.15A
|
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