Technical parameters/polarity: PNP
Technical parameters/dissipated power: 500 mW
Technical parameters/gain bandwidth product: 80 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.15A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 200 @2mA, 6V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.8 mm
External dimensions/width: 4.2 mm
External dimensions/height: 5.2 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PA1015GR
|
NXP | 类似代替 | TO-92-3 |
PNP通用晶体管 PNP general purpose transistor
|
||
KSA1015GRTA
|
ON Semiconductor | 功能相似 | TO-226-3 |
PNP 晶体管，40 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
KSA1015GRTA
|
Fairchild | 功能相似 | TO-226-3 |
PNP 晶体管，40 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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