Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 1000 @6A, 3V
Technical parameters/rated power (Max): 175 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 | TO-204 |
PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR
|
||
2N6287
|
ON Semiconductor | 功能相似 | TO-204-2 |
PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR
|
||
2N6287
|
Boca Semiconductor | 功能相似 |
PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR
|
|||
2N6287
|
Multicomp | 功能相似 | TO-3 |
PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR
|
||
2N6287
|
Motorola | 功能相似 | TO-3 |
PNP达林顿功率硅晶体管 PNP DARLINGTON POWER SILICON TRANSISTOR
|
||
|
|
M/A-Com | 功能相似 | TO-204 |
Trans Darlington PNP 100V 20A 175000mW 3Pin(2+Tab) TO-3
|
||
JANTXV2N6287
|
Microsemi | 功能相似 | TO-3 |
Trans Darlington PNP 100V 20A 175000mW 3Pin(2+Tab) TO-3
|
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