Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 90 V
Technical parameters/maximum allowable collector current: 30A
Technical parameters/minimum current amplification factor (hFE): 20 @15A, 2V
Technical parameters/rated power (Max): 6 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 6000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5671
|
Harris | 完全替代 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
|||
2N5671
|
Inchange Semiconductor | 完全替代 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
|||
2N5671
|
TT Electronics/BI | 完全替代 | TO-3 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
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