Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 W
Technical parameters/DC current gain (hFE): 25
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSE13009
|
Fairchild | 功能相似 | TO-220-3 |
高压开关模式的应用 High Voltage Switch Mode Applications
|
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|
|
Inchange Semiconductor | 类似代替 |
功率晶体管PNP硅 POWER TRANSISTOR PNP SILICON
|
|||
MJ4502
|
Motorola | 类似代替 |
功率晶体管PNP硅 POWER TRANSISTOR PNP SILICON
|
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MJ4502
|
NTE Electronics | 类似代替 | TO-3 |
功率晶体管PNP硅 POWER TRANSISTOR PNP SILICON
|
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