Technical parameters/dissipated power: 300 mW
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/breakdown voltage of gate source: 40 V
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-72-3
External dimensions/packaging: TO-72-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4117
|
Calogic | 功能相似 | TO-72 |
N-Channel JFET General Purpose Amplifier
|
||
2N4117
|
Intersil | 功能相似 |
N-Channel JFET General Purpose Amplifier
|
|||
2N4117
|
InterFET | 功能相似 | TO-72-3 |
N-Channel JFET General Purpose Amplifier
|
||
|
|
Ledil | 功能相似 |
N-Channel Silicon Junction Field-Effect Transistor
|
|||
|
|
InterFET | 功能相似 |
N-Channel Silicon Junction Field-Effect Transistor
|
|||
|
|
Calogic | 功能相似 | TO-72 |
N-Channel Silicon Junction Field-Effect Transistor
|
||
|
|
Linear Integrated System | 功能相似 | TO-72 |
N-Channel Silicon Junction Field-Effect Transistor
|
||
2N4117A
|
Micross | 功能相似 | TO-72 |
N-Channel Silicon Junction Field-Effect Transistor
|
||
2N4117A
|
Pulse Electronics | 功能相似 |
N-Channel Silicon Junction Field-Effect Transistor
|
|||
PN4119
|
Fairchild | 功能相似 | TO-226-3 |
JFET N-CH 40V 0.35W TO92
|
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