Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 60 @10mA, 1V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4410
|
Freescale | 类似代替 | TO-92 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N4410
|
Fairchild | 类似代替 | TO-226-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N4410
|
ON Semiconductor | 类似代替 | TO-226-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N4410
|
Central Semiconductor | 类似代替 | TO-226-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
|
|
Infineon | 功能相似 | TO-92 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC559C
|
Motorola | 功能相似 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
|||
BC559C
|
NXP | 功能相似 | TO-92 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
MPSA77
|
ON Semiconductor | 类似代替 | TO-92-3 |
PNP达林顿晶体管 PNP Darlington Transistor
|
||
|
|
HGF | 类似代替 | TO-92 |
PNP达林顿晶体管 PNP Darlington Transistor
|
||
MPSA77
|
Central Semiconductor | 类似代替 | TO-92 |
PNP达林顿晶体管 PNP Darlington Transistor
|
||
MPSA77
|
Fairchild | 类似代替 | TO-226-3 |
PNP达林顿晶体管 PNP Darlington Transistor
|
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