Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/minimum current amplification factor (hFE): 20 @100mA, 1V
Technical parameters/rated power (Max): 360 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4449
|
Microsemi | 完全替代 | TO-206 |
硅NPN开关晶体管 NPN SILICON SWITCHING TRANSISTOR
|
||
|
|
Microchip | 完全替代 | Bulk |
Trans GP BJT NPN 15V 3Pin TO-46
|
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