Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/minimum current amplification factor (hFE): 15 @1A, 3V
Technical parameters/rated power (Max): 6 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN2N5672
|
Microsemi | 功能相似 | TO-3 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
||
JANTX2N6676
|
Aeroflex | 功能相似 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
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