Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 类似代替 | TO-18 |
MULTICOMP 2N2906A 单晶体管 双极, PNP, 60 V, 400 mW, 600 mA, 40 hFE
|
||
|
|
ON Semiconductor | 类似代替 |
MULTICOMP 2N2906A 单晶体管 双极, PNP, 60 V, 400 mW, 600 mA, 40 hFE
|
|||
2N2906A
|
Semicoa Semiconductor | 类似代替 | BCY |
MULTICOMP 2N2906A 单晶体管 双极, PNP, 60 V, 400 mW, 600 mA, 40 hFE
|
||
2N2906A
|
Raytheon | 类似代替 |
MULTICOMP 2N2906A 单晶体管 双极, PNP, 60 V, 400 mW, 600 mA, 40 hFE
|
|||
2N2906A
|
Microsemi | 类似代替 | TO-18-3 |
MULTICOMP 2N2906A 单晶体管 双极, PNP, 60 V, 400 mW, 600 mA, 40 hFE
|
||
2N2906A
|
Fairchild | 类似代替 | TO-205 |
MULTICOMP 2N2906A 单晶体管 双极, PNP, 60 V, 400 mW, 600 mA, 40 hFE
|
||
2N2906A
|
Semelab | 类似代替 | TO-18 |
MULTICOMP 2N2906A 单晶体管 双极, PNP, 60 V, 400 mW, 600 mA, 40 hFE
|
||
2N2906A
|
Multicomp | 类似代替 | TO-18 |
MULTICOMP 2N2906A 单晶体管 双极, PNP, 60 V, 400 mW, 600 mA, 40 hFE
|
||
JANTXV2N2906A
|
Microsemi | 完全替代 | TO-18 |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review