Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/maximum allowable collector current: 0.3A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANS2N3501
|
Microsemi | 完全替代 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
|
|
ON Semiconductor | 完全替代 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JANTX2N3501
|
Semicoa Semiconductor | 完全替代 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JANTX2N3501
|
MSC | 完全替代 | TO-39-3 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review