Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40 @500mA, 1V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | TO-39-3 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
2N3467
|
Advanced Semiconductor | 完全替代 | TO-39 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
2N3467
|
Motorola | 完全替代 | TO-39 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
|
|
Central Semiconductor | 功能相似 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
|||
2N4029
|
Micro Electronics | 功能相似 | BCY |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
2N4029
|
Semicoa Semiconductor | 功能相似 | TO-18 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
2N4029
|
Microsemi | 功能相似 | TO-18-3 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
|
|
Microsemi | 类似代替 | TO-5 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
JANTX2N3467L
|
Microchip | 类似代替 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
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