Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 140 V
Technical parameters/maximum allowable collector current: 1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANSR2N3634L
|
Microsemi | 类似代替 | TO-5 |
TO-5 PNP 140V 1A
|
||
JANTXV2N3634L
|
ON Semiconductor | 类似代替 | TO-5-3 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
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