Technical parameters/dissipated power: 0.36 W
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/minimum current amplification factor (hFE): 20 @100mA, 1V
Technical parameters/rated power (Max): 360 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 360 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANS2N2369A
|
Microsemi | 完全替代 | TO-18 |
TO-18 NPN 15V
|
||
JANTX2N2369A
|
Microsemi | 完全替代 | TO-18 |
Trans GP BJT NPN 15V 360mW 3Pin TO-18
|
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