Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/rated power (Max): 400 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 400 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3485A
|
Microsemi | 功能相似 | TO-46-3 |
PNP硅小信号晶体管 PNP SILICON SMALL SIGNAL TRANSISTOR
|
||
JAN2N3485A
|
Microsemi | 功能相似 | TO-206 |
TO-46 PNP 60V 0.6A
|
||
JANTXV2N3485A
|
Microsemi | 功能相似 | TO-206 |
TO-46 PNP 60V 0.6A
|
||
JANTXV2N3485A
|
Semicoa Semiconductor | 功能相似 | TO-46 |
TO-46 PNP 60V 0.6A
|
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