Technical parameters/dissipated power: 0.8 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
SEME-LAB | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) NPN Ampl/Switch
|
|||
2N2219
|
CDIL | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) NPN Ampl/Switch
|
|||
2N2219
|
Microsemi | 功能相似 | TO-39 |
双极晶体管 - 双极结型晶体管(BJT) NPN Ampl/Switch
|
||
2N2219A
|
Rectron | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
|
|
Semelab | 功能相似 | TO-205 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
|
|
New Jersey Semiconductor | 功能相似 | 3 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
Multicomp | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
ST Microelectronics | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
Continental Device | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
Motorola | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
Fairchild | 功能相似 | TO-226 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
CDIL | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
National Semiconductor | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
Rectron Semiconductor | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
Major Brands | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review