Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/gain: 21 dB
Technical parameters/minimum current amplification factor (hFE): 30 @3mA, 1V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/packaging: SMD-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2857UB
|
Microsemi | 功能相似 | SMD-3 |
Trans RF BJT NPN 15V 0.04A 3Pin UB
|
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