Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SMD-4
External dimensions/packaging: SMD-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2222AUA
|
Microsemi | 类似代替 | SMD-4 |
硅NPN开关晶体管 NPN SILICON SWITCHING TRANSISTOR
|
||
JAN2N2222AUA
|
Microsemi | 完全替代 | SMD-4 |
Trans GP BJT NPN 50V 0.8A 4Pin UA
|
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