Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/packaging: SMD-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Aeroflex | 功能相似 |
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TT Electronics/Optek Technology | 功能相似 | LCC-3 |
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2N2222AUB
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Micropac | 功能相似 |
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2N2222AUB
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Semicoa Semiconductor | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
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2N2222AUB
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Microsemi | 功能相似 | SMD-3 |
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Aeroflex | 类似代替 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
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JANS2N2222AUB
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Microchip | 类似代替 |
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Semicoa Semiconductor | 功能相似 | 4 |
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Semicoa Semiconductor | 类似代替 | CSOT-23 |
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JANTX2N2222AUB
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ST Microelectronics | 类似代替 |
Trans GP BJT NPN 50V 0.8A 3Pin UB
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JANTXV2N2222AUB
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Microsemi | 功能相似 | SMD-3 |
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JANTXV2N2222AUB
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Semicoa Semiconductor | 功能相似 | SOT |
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JANTXV2N2222AUB
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Microchip | 功能相似 |
Silicon NPN Transistor
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