Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 35 @750mA, 4V
Technical parameters/rated power (Max): 1.75 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1750 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-8
External dimensions/packaging: TO-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N1485
|
NJS | 完全替代 |
NPN硅中功率晶体管 NPN SILICON MEDIUM POWER TRANSISTOR
|
|||
JANTX2N1485
|
Microsemi | 完全替代 | TO-233 |
NPN硅中功率晶体管 NPN SILICON MEDIUM POWER TRANSISTOR
|
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