Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/minimum current amplification factor (hFE): 40 @5A, 5V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5237S
|
Microsemi | 类似代替 | TO-39 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
|
|
Microsemi | 类似代替 | TO-205 |
TO-39 NPN 120V 10A
|
||
|
|
Microsemi | 完全替代 | TO-5 |
TO-5 NPN 120V 10A
|
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