Technical parameters/number of channels: 1
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 110 ns
Technical parameters/Input capacitance (Ciss): 3070pF @50V(Vds)
Technical parameters/descent time: 96 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 140W (Tc)
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRFR3607
|
International Rectifier | 完全替代 | TO-252-3 |
INFINEON AUIRFR3607 晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 10 V, 2 V
|
||
IRFSL3607PBF
|
International Rectifier | 完全替代 | TO-262-3 |
HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) ### MOSFET 晶体管，Infineon Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
IRFSL3607PBF
|
Infineon | 完全替代 | TO-262-3 |
HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) ### MOSFET 晶体管，Infineon Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
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