Technical parameters/forward voltage: 1V @1A
Technical parameters/thermal resistance: 60℃/W (RθJA)
Technical parameters/reverse recovery time: 50 ns
Technical parameters/Maximum reverse voltage (Vrrm): 200 V
Technical parameters/forward current: 1 A
Technical parameters/Maximum forward surge current (Ifsm): 30 A
Technical parameters/maximum reverse leakage current (Ir): 5 uA
Technical parameters/forward voltage (Max): 1 V
Technical parameters/forward current (Max): 1 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-213AB
External dimensions/length: 5.2 mm
External dimensions/width: 2.67 mm
External dimensions/height: 2.67 mm
External dimensions/packaging: DO-213AB
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 1500
Other/Manufacturing Applications: Communication and networking, power management, automotive, consumer electronics, commercial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYM12-200-E3/97
|
Vishay Semiconductor | 完全替代 | DO-213AB |
1A，Vishay Semiconductor Vishay 超快恢复整流器，具有非常快速的低至 15ns 反向恢复时间和高达 1500V 的电压级别。 典型应用包括较高频率切换模式电源 (SMPS)、反相器和续流二极管。 ### 二极管和整流器，Vishay Semiconductor
|
||
BYM12-200HE3/96
|
VISHAY | 类似代替 | DO-213AB |
整流器 RECOMMENDED ALT 78-BYM12-200HE3_A/H
|
||
DL4003-13-F
|
Diodes | 功能相似 | DL-41 |
Diode 200V 1A 2Pin MELF T/R
|
||
EGL41D-E3/96
|
VISHAY | 完全替代 | DO-213AB |
VISHAY EGL41D-E3/96 快速/超快二极管, 单, 200 V, 1 A, 1 V, 50 ns, 30 A
|
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