Technical parameters/rated voltage (DC): 100 V
Technical parameters/tolerances: ±0.5 %
Technical parameters/rated power: 400 mW
Technical parameters/resistance: 10 kΩ
Technical parameters/resistance deviation: ±0.5 %
Technical parameters/rated voltage: 100 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 125℃
Physical parameters/temperature coefficient: ±25 ppm/℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: -
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ORNTA1002BT1
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
RES ARRAY 4 RES 10KΩ 8SOIC
|
||
ORNTA1002DT1
|
VISHAY | 类似代替 | SOIC |
成型, 5000万间距,双列直插电阻网络 Molded, 50 Mil Pitch, Dual-In-Line Resistor Network
|
||
ORNTA1002DT1
|
Vishay Thin Film | 类似代替 | SOIC-8 |
成型, 5000万间距,双列直插电阻网络 Molded, 50 Mil Pitch, Dual-In-Line Resistor Network
|
||
ORNTA1002DT1
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
成型, 5000万间距,双列直插电阻网络 Molded, 50 Mil Pitch, Dual-In-Line Resistor Network
|
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