Technical parameters/drain source resistance: 80.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 7 ns
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SO-8
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75831SK8T
|
Freescale | 功能相似 |
3A ， 150V ， 0.095 Ohm的N通道， UltraFET功率MOSFET 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
|
|||
HUF75831SK8T
|
ON Semiconductor | 功能相似 | SOIC-8 |
3A ， 150V ， 0.095 Ohm的N通道， UltraFET功率MOSFET 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
|
||
PSMN085-150K,518
|
Nexperia | 功能相似 | SOIC-8 |
SO N-CH 150V 3.5A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review