Technical parameters/number of output interfaces: 1
Technical parameters/drain source resistance: 35.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 74.0 W
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/output current (Max): 12 A
Technical parameters/number of inputs: 1
Technical parameters/dissipated power (Max): 74000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VNB14NV0413TR
|
ST Microelectronics | 类似代替 | TO-263-3 |
OMNIFET II完全autoprotected功率MOSFET OMNIFET II fully autoprotected Power MOSFET
|
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