Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 200 mA
Technical parameters/drain source resistance: 5.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350mW (Tc)
Technical parameters/input capacitance: 60.0 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/Input capacitance (Ciss): 60pF @25V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350mW (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7000G
|
Supertex | 类似代替 | TO-92 |
ON SEMICONDUCTOR 2N7000G 晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3 V
|
||
2N7000RLRAG
|
ON Semiconductor | 类似代替 | TO-92-3 |
N 通道功率 MOSFET，60V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review