Technical parameters/working voltage: 28 V
Technical parameters/breakdown voltage: 31.1 V
Technical parameters/clamp voltage: 45.4 V
Technical parameters/peak pulse power: 5000 W
Technical parameters/minimum reverse breakdown voltage: 31.1 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: P600
External dimensions/packaging: P600
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Ammo Pack
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
5KP28A-E3/51
|
VISHAY | 完全替代 | P-600 |
ESD 抑制器/TVS 二极管 5000W 28V Unidirect
|
||
5KP28A-E3/54
|
Vishay Siliconix | 类似代替 |
TRANSZORB® 瞬态电压抑制器轴向单向 5000W，Vishay Semiconductor P600 封装，带玻璃钝化接头 极佳的夹持能力 非常快的响应时间 低增量抗浪涌性 符合汽车 AEC-Q101 规格 ### 瞬态电压抑制器，Vishay Semiconductor
|
|||
5KP28A-E3/54
|
VISHAY | 类似代替 | P-600 |
TRANSZORB® 瞬态电压抑制器轴向单向 5000W，Vishay Semiconductor P600 封装，带玻璃钝化接头 极佳的夹持能力 非常快的响应时间 低增量抗浪涌性 符合汽车 AEC-Q101 规格 ### 瞬态电压抑制器，Vishay Semiconductor
|
||
5KP28A-E3/54
|
Vishay Semiconductor | 类似代替 | P600-2 |
TRANSZORB® 瞬态电压抑制器轴向单向 5000W，Vishay Semiconductor P600 封装，带玻璃钝化接头 极佳的夹持能力 非常快的响应时间 低增量抗浪涌性 符合汽车 AEC-Q101 规格 ### 瞬态电压抑制器，Vishay Semiconductor
|
||
|
|
VISHAY | 完全替代 | P-600 |
ESD 抑制器/TVS 二极管 5KW 28V 5% Unidir AEC-Q101 Qualified
|
||
5KP28AHE3/73
|
Vishay Semiconductor | 完全替代 | P600 |
ESD 抑制器/TVS 二极管 5KW 28V 5% Unidir AEC-Q101 Qualified
|
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