Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 150mW (Ta)
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Continuous drain current (Ids): 0.1A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 6.2pF @10V(Vds)
Technical parameters/descent time: 75 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002WT1G
|
ON Semiconductor | 功能相似 | SC-70-3 |
ON SEMICONDUCTOR 2N7002WT1G. 场效应管, MOSFET, N沟道, 60V, 340mA, SC-70, 整卷
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review