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Technical parameters/power supply voltage (DC): 4.50V ~ 5.50V
Technical parameters/number of output interfaces: 1
Technical parameters/power supply current: 50 nA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 471 mW
Technical parameters/bandwidth: 520 MHz
Technical parameters/number of inputs: 1
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 520 MHz
Technical parameters/dissipated power (Max): 471 mW
Technical parameters/power supply voltage: 2V ~ 12V
Technical parameters/power supply voltage (Max): 12 V
Technical parameters/power supply voltage (Min): 2 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TS12A12511DRJR
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS TS12A12511DRJR 模拟开关, SPDT, 1 放大器, 5 ohm, ± 2.7V 至 ± 6V, SOIC, 8 引脚
|
||
TS12A4514DG4
|
TI | 完全替代 | SOIC-8 |
低电压，低导通电阻SPST CMOS模拟开关 LOW-VOLTAGE, LOW ON-STATE RESISTANCE SPST CMOS ANALOG SWITCHES
|
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