Technical parameters/rise/fall time: 0.02 µs
Technical parameters/number of pins: 2
Technical parameters/forward voltage: 1.35 V
Technical parameters/wavelength: 850 nm
Technical parameters/perspective: 150°
Technical parameters/peak wavelength: 850 nm
Technical parameters/dissipated power: 110 W
Technical parameters/rise time: 20 ns
Technical parameters/test current: 65 mA
Technical parameters/forward current: 65 mA
Technical parameters/forward voltage (Max): 1.65 V
Technical parameters/forward current (Max): 65 mA
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 110 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SMD
External dimensions/height: 1 mm
External dimensions/packaging: SMD
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VSMB10940
|
Vishay Semiconductor | 功能相似 | SMD-2 |
高速红外发光二极管， 940纳米， GaAlAs的， MQW High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review