Technical parameters/rated voltage (DC): 15.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 350 mW
Technical parameters/input capacitance: 2pF (Max)
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/gain: 15 dB
Technical parameters/minimum current amplification factor (hFE): 50 @8mA, 10V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5770
|
Micro Electronics | 类似代替 | TO-92 |
Trans RF BJT NPN 15V 0.05A 3Pin TO-92 Bulk
|
||
2N5770
|
Central Semiconductor | 类似代替 | TO-226-3 |
Trans RF BJT NPN 15V 0.05A 3Pin TO-92 Bulk
|
||
|
2N5770
|
Freescale | 类似代替 |
Trans RF BJT NPN 15V 0.05A 3Pin TO-92 Bulk
|
|||
2N5770
|
Fairchild | 类似代替 | TO-226-3 |
Trans RF BJT NPN 15V 0.05A 3Pin TO-92 Bulk
|
||
PN3563
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR PN3563 单晶体管 双极, NPN, 15 V, 1.5 GHz, 350 mW, 50 mA, 200 hFE
|
||
PN3563LEADFREE
|
Central Semiconductor | 功能相似 |
RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-92,
|
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