Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -4.00 A
Technical parameters/number of channels: 2
Technical parameters/drain source resistance: 0.052 Ω
Technical parameters/polarity: Dual P-Channel, P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): -4.00 A
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 690pF @15V(Vds)
Technical parameters/rated power (Max): 900 mW
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS4935BZ
|
ON Semiconductor | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4935BZ. 场效应管, MOSFET, P沟道, -30V, SOIC
|
||
FDS4935BZ
|
Fairchild | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4935BZ. 场效应管, MOSFET, P沟道, -30V, SOIC
|
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