Technical parameters/rated current: 700 mA
Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.18 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 300 mW
Technical parameters/threshold voltage: 1.1 V
Technical parameters/input capacitance: 114 pF
Technical parameters/gate charge: 1.40 nC
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: ±20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 700 mA
Technical parameters/rise time: 14.0 ns
Technical parameters/Input capacitance (Ciss): 113pF @10V(Vds)
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.3 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDG6332C_F085
|
ON Semiconductor | 类似代替 | SC-70 |
FAIRCHILD SEMICONDUCTOR FDG6332C_F085 双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
|
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