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Model 2SJ554-E
Description Silicon P Channel MOS Field Effect Transistor
Product QR code
Brand: Renesas Electronics
Packaging TO-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
28.45  yuan 28.45yuan
5+:
$ 33.2830
50+:
$ 31.8606
200+:
$ 31.0641
500+:
$ 30.8650
1000+:
$ 30.6659
2500+:
$ 30.4383
5000+:
$ 30.2961
7500+:
$ 30.1538
Quantity
5+
50+
200+
500+
1000+
Price
$33.2830
$31.8606
$31.0641
$30.8650
$30.6659
Price $ 33.2830 $ 31.8606 $ 31.0641 $ 30.8650 $ 30.6659
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9785) Minimum order quantity(5)
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Technical parameters/polarity: P-CH

Technical parameters/dissipated power: 100 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Continuous drain current (Ids): 45A

Technical parameters/rise time: 160 ns

Technical parameters/Input capacitance (Ciss): 2500pF @10V(Vds)

Technical parameters/descent time: 240 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 100000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3

External dimensions/packaging: TO-3

Physical parameters/materials: Silicon

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SJ554 2SJ554 HITACHI 完全替代 TO-3
硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
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