Technical parameters/dissipated power: 750 mW
Technical parameters/minimum current amplification factor (hFE): 30 @50mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 120 @50mA, 10V
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 750 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/packaging: TO-39-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5415
|
Multicomp | 完全替代 | TO-39 |
PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR
|
||
2N5415
|
ON Semiconductor | 完全替代 |
PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR
|
|||
2N5415
|
CDIL | 完全替代 |
PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR
|
|||
2N5415
|
Harris | 完全替代 |
PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR
|
|||
2N5415
|
Microsemi | 完全替代 | TO-5 |
PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR
|
||
|
|
Microsemi | 完全替代 | TO-205 |
PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR
|
||
JANTX2N5415S
|
Microsemi | 完全替代 | TO-205 |
PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR
|
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