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Model STB4NB80
Description N - CHANNEL 800V - 3Ω - 4A - TO- 220 / TO- 220FP PowerMESHO MOSFET N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESHO MOSFET
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Brand: ST Microelectronics
Packaging TO-263-3
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Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5504) Minimum order quantity(1)
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Technical parameters/drain source resistance: 3.00 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 100 W

Technical parameters/leakage source breakdown voltage: 800 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 4.00 A

Technical parameters/rise time: 8 ns

Technical parameters/descent time: 9 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.4 mm

External dimensions/width: 9.35 mm

External dimensions/height: 4.6 mm

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: Non-Compliant

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