Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: SIP-4
External dimensions/packaging: SIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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EIC | 功能相似 | 4 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 600V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
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KBU4J
|
Diotec Semiconductor | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 600V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
KBU4J
|
Semtech Corporation | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 600V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
KBU4J
|
General Instrument | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 600V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
KBU4J
|
Daesan Electronics | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 600V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
|
|
EIC | 功能相似 | 4 |
Bridge Rectifier Diode, 1 Phase, 8A, 200V V(RRM), Silicon, 23.50 X 5.7MM, 19.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
||
KBU8D
|
DC Components | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 8A, 200V V(RRM), Silicon, 23.50 X 5.7MM, 19.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
|
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Good-Ark Electronics | 功能相似 | KBU |
Bridge Rectifier Diode, 1 Phase, 8A, 200V V(RRM), Silicon, 23.50 X 5.7MM, 19.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
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