Technical parameters/frequency: 20 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 100 W
Technical parameters/breakdown voltage (collector emitter): 140 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 50 @3A, 4V
Technical parameters/rated power (Max): 100 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 100 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
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Quanzhou Jinmei Electronic | 功能相似 |
Transistor, Bjt, Npn, 140V v(Br)Ceo, 10A i(c), To-247var
|
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2SC4468
|
Sanken Electric | 功能相似 | TO-3-3 |
Transistor, Bjt, Npn, 140V v(Br)Ceo, 10A i(c), To-247var
|
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